IRFR120NTRPBF vs IRFML8244TRPBF Comparación
Comparación detallada lado a lado de IRFR120NTRPBF por Infineon y IRFML8244TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR120NTRPBF | IRFML8244TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,26 | $0,15 |
| Drain-to-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Rango de temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK) | SOT-23-3 (TO-236-3, SC-59) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | IR MOSFET (HEXFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 5.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| RDS(on) max @ VGS=10V | — | 24 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | 5.4 nC |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation (PD) max | — | 1.25 W (Ta) |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (junction) |
| Nivel MSL | — | MSL1 |
| Pin Configuration | — | Industry-standard SOT-23 pinout (G-D-S) |
| Estado RoHS | — | Compliant (Pb-free, halogen-free) |
| Qualification | — | Consumer grade |