IRFR120NTRPBF vs IRFML8244TRPBF Comparaison
Comparaison détaillée côte à côte de IRFR120NTRPBF par Infineon et IRFML8244TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR120NTRPBF | IRFML8244TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,26 | $0,15 |
| Drain-to-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Plage de température de jonction en fonctionnement | -55C to +175C | — |
| Boîtier | TO-252AA (DPAK) | SOT-23-3 (TO-236-3, SC-59) |
| Type de montage | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | IR MOSFET (HEXFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Type de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 5.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 20 V |
| RDS(on) max @ VGS=10V | — | 24 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | 5.4 nC |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation (PD) max | — | 1.25 W (Ta) |
| Plage de température de fonctionnement | — | -55 C to +150 C (junction) |
| Niveau MSL | — | MSL1 |
| Pin Configuration | — | Industry-standard SOT-23 pinout (G-D-S) |
| Statut RoHS | — | Compliant (Pb-free, halogen-free) |
| Qualification | — | Consumer grade |