IRFR120NTRPBF vs IRFR9120NTRPBF Comparación
Comparación detallada lado a lado de IRFR120NTRPBF por Infineon y IRFR9120NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR120NTRPBF | IRFR9120NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,26 | $0,32 |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | -6.6 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Rango de temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET fifth-generation IR MOSFET |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Nivel MSL | — | 1 (unlimited floor life) |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Estado RoHS | — | Compliant |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |