IRFR120NTRPBF vs IRFR9120NTRPBF 비교

다음의 상세 나란히 비교: IRFR120NTRPBF 제조: Infineon 및 IRFR9120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR120NTRPBF IRFR9120NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.26 $0.32
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 9.4 A -6.6 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
동작 접합 온도 범위 -55C to +175C -55C to +175C
패키지 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
실장 유형 Surface Mount Surface Mount
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) HEXFET fifth-generation IR MOSFET
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -100 V
On-Resistance (RDS(on)) max at VGS=-10V — 480 milliohm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 18 nC (typical)
Continuous Power Dissipation (PD) at TC=25C — 40 W
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
MSL 레벨 — 1 (unlimited floor life)
Lead Finish / Plating — Pb-free (PBF suffix), Matte Tin
RoHS 상태 — Compliant
Moisture Sensitivity — MSL1 per JEDEC J-STD-020

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