IRFR9120NTRPBF - 100V P-Channel HEXFET MOSFET, 6.6A | Infineon
N.º de pieza: IRFR9120NTRPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.86 | $0,86 |
| 10 | $0.74 | $7,40 |
| 100 | $0.62 | $62,00 |
| 500 | $0.49 | $245,00 |
| 1.000 | $0.41 | $410,00 |
| 3.000 | $0.32 | $960,00 |
IRFR9120NTRPBF Descripción general
A P-Channel MOSFET is a type of field-effect transistor in which the body and source terminals are tied together through a P-N junction that is reverse-biased under normal operation. When a negative gate-source voltage is applied, a conductive P-channel inverts at the surface, allowing conventional current to flow from source to drain. P-Channel devices sit at the high-side of a load in low-side switch topologies, simplifying gate drive in systems where the negative rail is the system ground. As a member of the power MOSFET family, P-Channel parts complement their N-Channel counterparts in H-bridges, level shifters, and reverse-polarity protection circuits.
Key differentiating features of the IRFR9120NTRPBF include its -100 V drain-source rating that provides substantial margin against 48 V telecom rails and 60 V rectified supplies, an on-resistance of 480 milliohm which keeps conduction loss modest for a 6.6 A device, and a low gate charge of 18 nC that minimizes driver loss at higher switching frequencies. The DPAK (TO-252AA) surface-mount package provides a low thermal resistance of approximately 50 C/W when the tab is soldered to 1 square inch of 2 oz copper, enabling natural-convection cooling at the part's 40 W rating.
Architecturally, the IRFR9120NTRPBF is built on Infineon's IR MOSFET cell technology, which uses a vertical DMOS structure with a HEXFET cellular layout to maximize channel width per unit silicon area. The die is housed in a DPAK plastic package with a metal tab acting as the drain terminal, providing both electrical connection and a direct thermal path to the PCB copper pour. The avalanche-rated design ensures the device can absorb unclamped inductive switching transients commonly seen when driving relays, solenoids, or motors.
Typical applications include high-side load switching in 24 V and 48 V industrial systems, polarity-reversal protection in battery management circuits, DC motor drive bridges, solenoid and relay drivers, and synchronous rectifier positions in low-frequency buck-derived converters. The part is also commonly used as a high-side switch in audio amplifier muting circuits where its low on-resistance minimizes signal-path loss.
When designing with the IRFR9120NTRPBF, ensure that VGS does not exceed the +/-20 V absolute maximum rating and that the gate is driven from a low-impedance source to avoid dv/dt-induced turn-on. The DPAK tab must be soldered to a copper pad of at least 50 mm squared for the device to achieve its rated 40 W dissipation, and a gate-source resistor of 10 kohm is recommended to hold the device off during power-up transitions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para IRFR9120NTRPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRFR9120NTRPBF (mismo factor de forma y huella) — difiere en Technology, RoHS Status, Package, Drain-Source Voltage (VDS), MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRFR9120NTRLPBF
✅ Sustitución directa✓ En stock
$0.61 / unidad
Ver hoja de datos →IRF7319TRPBF
✅ Sustitución directa✓ En stock
$0.62 / unidad
Ver hoja de datos →IRFR120NTRPBF
✅ Sustitución directa✓ En stock
$0.26 / unidad
Ver hoja de datos →SiHFR9120TR-GE3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AP10P10GH-HF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFR9120NTRPBF Valores máximos y características eléctricas
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25C | -6.6 A |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Gate Charge (Qg) | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | 40 W |
| Rango de temperatura de unión de funcionamiento | -55C to +175C |
| Encapsulado | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount |
| Nivel MSL | 1 (unlimited floor life) |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin |
| Technology | HEXFET fifth-generation IR MOSFET |
| Estado RoHS | Compliant |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 |
Configuración de pines de IRFR9120NTRPBF
| Pin 1 | Gate — MOSFET gate input, drive from low-impedance source referenced to source pin |
| Pin 2 | Source — P-channel source, internally connected to the metal mounting tab; place on the high-impedance (load) side of the switch |
| Pin 3 | Drain — P-channel drain, internally connected to the metal tab; tie to the positive supply rail |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IRFR9120NTRPBF es adecuado para 6 aplicacións: High-Side Load Switch in 48V Telecom Systems, Reverse-Polarity Protection Circuit, Solenoid and Relay Driver, DC Motor Drive Half-Bridge, Battery Disconnect Switch, Audio Amplifier Muting Switch.
High-Side Load Switch in 48V Telecom Systems
The IRFR9120NTRPBF fits 48V telecom high-side load switching because its -100V VDS rating provides a 2:1 safety margin over nominal 48V rails, while the 480 milliohm on-resistance keeps conduction loss low for 3-5A continuous loads. Placed between the 48V backplane bus and the load with a gate pull-down resistor and a PNP driver stage, it eliminates the need for a charge pump. The HEXFET avalanche rating tolerates the unclamped inductive transients of failed downstream capacitors, an important reliability consideration in hot-swap and OR-ing topologies. At 4A and 48V, conduction loss is approximately 7.7W, requiring thermal management via the DPAK tab and PCB copper pour.
Recomendado
Reverse-Polarity Protection Circuit
The IRFR9120NTRPBF works as a reverse-polarity protection (RPP) switch because its P-channel configuration places the body diode in the correct orientation to block reverse current without external steering. With source tied to the system side and drain to the battery, a positive battery voltage keeps VGS near zero and the device off, while a correctly-connected battery pulls VGS negative and turns it on. The 480 milliohm RDS(on) adds only modest voltage drop at 6.6A - far better than a Schottky diode - and the HEXFET process tolerates the inrush current of bulk input capacitors on hot-plug events. Compared to a Schottky RPP, this P-channel solution saves 200-400 mW of conduction loss.
Recomendado
Solenoid and Relay Driver
The IRFR9120NTRPBF is a good fit for solenoid and relay drivers because the 100V VDS rating easily absorbs the back-EMF of 24V and 48V coils when switched off. A freewheeling diode across the coil is mandatory, and the HEXFET avalanche rating provides additional transient protection if the diode is omitted or fails. The 18 nC total gate charge enables direct drive from a microcontroller GPIO through a gate resistor, eliminating the need for a dedicated gate driver IC in cost-sensitive designs. Switching 1A solenoids at 24V dissipates only about 0.5W, well within the 40W thermal budget when the DPAK tab is soldered to the PCB copper pour.
Recomendado
DC Motor Drive Half-Bridge
The IRFR9120NTRPBF works as the high-side switch in a brushed DC motor half-bridge because P-channel devices eliminate the need for a bootstrap or charge-pump high-side driver. With the source tied to the motor terminal and the drain to the supply, a logic-level gate signal from a micro can switch a 24V motor at up to 6.6A continuous current. The 480 milliohm RDS(on) keeps dissipation to 15W at 5A, requiring a heatsink for continuous motor operation above 3A. Pair with an N-channel low-side switch such as the IRFR120NTRPBF (also in DPAK) for a compact half-bridge footprint.
Recomendado
Battery Disconnect Switch
The IRFR9120NTRPBF fits battery disconnect switches in 12V to 48V battery packs because P-channel high-side placement allows the load to be switched off with a ground-referenced gate signal. The 100V VDS rating provides safety margin for transient voltages during load-dump events, while the 6.6A continuous current handles typical disconnect-rated loads in e-bike, solar, and UPS systems. A 10 kohm gate-source resistor holds the device off during controller reset, and the HEXFET avalanche rating tolerates the inductive kick of the battery wiring inductance. Quiescent current is essentially zero (gate leakage only), preserving battery shelf life.
Recomendado
Audio Amplifier Muting Switch
The IRFR9120NTRPBF suits audio amplifier muting switches because the P-channel high-side configuration places the switch in series with the amplifier supply rail, eliminating audible turn-on/turn-off transients when properly sequenced. The 480 milliohm on-resistance adds negligible series resistance (less than 0.05 dB attenuation at 8 ohms), preserving audio fidelity. The HEXFET process produces no measurable current-shot noise or popcorn noise, an important consideration in audio mute circuits where mechanical relays often cause clicks. The DPAK package allows the switch to be placed near the amplifier supply pin for clean PCB layout.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRFR9120NTRPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRFR9120NTRLPBF | IRF7319TRPBF | IRFR120NTRPBF | SiHFR9120TR-GE3 | AP10P10GH-HF |
|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | Advanced Power Electronics |
| Polarity | P-Channel | P-Channel | P-Channel (dual) | N-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V | -30 V | 100 V | -100 V | -100 V |
| RoHS Compliant | Yes (Pb-free) | Yes (Pb-free) | Yes | Yes | Yes | Yes (Halogen-Free) |
Diferenciadores clave
- P-Channel high-side configuration eliminates gate-drive complexity (frente a N-channel MOSFETs in TO-220)
- HEXFET fifth-generation avalanche rating for inductive load robustness (frente a Standard planar MOSFETs in same DPAK)
- Industry-standard DPAK footprint shared with IRF7319 dual P-channel (frente a Proprietary P-channel packages from other vendors)
Notas de diseño
The DPAK package can only achieve its 40 W rating when the metal tab is soldered to a PCB copper pad of at least 50 mm squared (approximately 1 square inch) of 2 oz copper. At 100 V VDS and 6.6 A continuous, conduction loss at full load is approximately 20.9 W - well within the rating only with substantial copper. Estimate: P_D = I_D_squared x R_DS(on) = 6.6 x 6.6 x 0.48 = 20.9 W. Designers should add thermal vias to an internal copper plane or use an external heatsink for continuous full-load operation.
The DPAK land pattern must extend the drain pad (pin 3 and the metal tab) to a copper pour that serves as both electrical connection and heatsink. The source pin (pin 2) is also internally connected to the metal tab on most P-channel HEXFET DPAK layouts, so a 'floating' tab arrangement is not possible. Use a minimum 2 oz copper on the drain pad to keep thermal resistance below 50 C/W. A gate-source resistor of 10 kohm placed close to the gate pin prevents dv/dt-induced turn-on in noisy switching environments.
Do not exceed the +/-20 V VGS absolute maximum rating; transient gate over-voltage from a poorly clamped gate driver is the most common failure mode. Always include a freewheeling diode when switching inductive loads (relays, solenoids, motors) because unclamped inductive kick can exceed 100 V even at low supply voltages. Confirm the tab orientation against the molded notch on the package body before soldering - the DPAK has no polarity indicator beyond the notch, and reversing the part can short the drain to the wrong rail.
Información de cumplimiento
Pb-free (PBF suffix) per Infineon datasheet. RoHS and REACH compliant per GlobalSpec product record. Not AEC-Q100 qualified - this is an industrial/consumer part. Halogen-free status not explicitly stated in datasheet.
