IRFR220NPBF vs IRFZ24NPBF Comparación
Comparación detallada lado a lado de IRFR220NPBF por Infineon y IRFZ24NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR220NPBF | IRFZ24NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,46 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 5 A | 17 A |
| Power Dissipation (PD) at TC=25C | 43 W | 45 W |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Tipo de montaje | Surface Mount | Through Hole |
| Encapsulado / Carcasa | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET planar cell |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| Recuento de pines | 3 (Gate, Drain, Source) plus tab | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Encapsulado | — | TO-220AB (through hole) |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |