IRFR220NPBF vs IRFZ24NPBF 对比
详细并排对比 IRFR220NPBF 出自 Infineon 和 IRFZ24NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR220NPBF | IRFZ24NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.46 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 5 A | 17 A |
| Power Dissipation (PD) at TC=25C | 43 W | 45 W |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| 安装类型 | Surface Mount | Through Hole |
| 封装 / 外壳 | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET planar cell |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| 工作温度范围 | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| 引脚数量 | 3 (Gate, Drain, Source) plus tab | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ± 20 V |
| RDS(on) at VGS=10V | — | 70 mOhm (max) |
| 工作结温 | — | -55C to +175C |
| 封装 | — | TO-220AB (through hole) |
| Switching Frequency Range | — | Optimized for < 100 kHz |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Qualification | — | JEDEC standard |
| Channel Mode | — | Enhancement |