IRFR2405TRPBF vs IRFR220NTRPBF Comparación
Comparación detallada lado a lado de IRFR2405TRPBF por Infineon y IRFR220NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR2405TRPBF | IRFR220NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,22 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | 15 nC (typical per Mouser listing) |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55°C to +150°C |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) + Tab | — |
| Nivel MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Estado RoHS | Compliant (Lead-Free PBF suffix) | Compliant (PBF suffix) |
| Sin halógenos | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |