IRFR2405TRPBF vs IRFR220NTRPBF 对比

详细并排对比 IRFR2405TRPBF 出自 Infineon 和 IRFR220NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 量产中
Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF ✓ 量产中

规格对比

参数 IRFR2405TRPBF IRFR220NTRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.22
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 15 nC (typical per Mouser listing)
Power Dissipation (PD) at Tc=25C 110 W —
工作结温 -55C to +175C -55°C to +150°C
封装 TO-252AA (DPAK) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) + Tab —
MSL 等级 1 1 (unlimited floor life per JEDEC J-STD-020)
RoHS 状态 Compliant (Lead-Free PBF suffix) Compliant (PBF suffix)
无卤 [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

数据手册与资源

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