IRFR3710ZTRLPBF vs IRFR024NTRPBF Comparación
Comparación detallada lado a lado de IRFR3710ZTRLPBF por Infineon y IRFR024NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR3710ZTRLPBF | IRFR024NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,31 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), HEXFET | — |
| Drain to Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C (Tc) | 42 A | — |
| Max Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=10V | 18 mOhm | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs(th) typ) | [DATA_NEEDED: Vgs(th)] | — |
| Total Gate Charge (Qg) | 69 nC | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| Avalanche Energy Rating (EAS) | 150 mJ | — |
| Maximum Junction Temperature | 175 C | — |
| Encapsulado | TO-252AA (DPAK), 3-pin (2+tab) | TO-252-3 (DPAK, SC-63), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Lisleapex listing) | — |
| Configuration | Single with built-in diode | — |
| Temperatura de funcionamiento | -55 C to +175 C (TJ) | — |
| Estado RoHS | Compliant (Pb-free PBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| Tipo de transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 17 A (at TC = 25 C) |
| Pulsed Drain Current (IDM) | — | 60 A |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |