IRFR3710ZTRPBF vs IRFR6215TRLPBF Comparación
Comparación detallada lado a lado de IRFR3710ZTRPBF por Infineon y IRFR6215TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR3710ZTRPBF | IRFR6215TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,42 | $0,38 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | -150 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (Fifth Generation) |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 580 mOhm |
| Total Gate Charge (Qg) typ | — | 44 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Maximum Operating Junction Temperature | — | 175 C |
| Nivel MSL | — | 1 |