IRFR9024NTRLPBF vs IRF7205PBF Comparación
Comparación detallada lado a lado de IRFR9024NTRLPBF por Infineon y IRF7205PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR9024NTRLPBF | IRF7205PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,32 | $0,47 |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | -55 V | -30 V |
| Continuous Drain Current (ID) at TC=25C | -11 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 175 mOhm | 70 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Power Dissipation (PD) at TC=25C | 38 W | — |
| Gate Charge (Qg) typical | 12.7 nC | — |
| Package Type | TO-252AA (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Drain, Gate, Source + Tab) | — |
| Technology | HEXFET (Generation 5) | IR MOSFET (HEXFET, planar cell) |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 C to +150 C (junction) |
| Lead-Free / RoHS | Yes (LPBF suffix) | — |
| Reel Orientation | Left (TRL suffix) | — |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | — | -1 V to -3 V (typical) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Encapsulado | — | SO-8 |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Estado RoHS | — | Compliant (Pb-free per PBF suffix) |
| Generation | — | Fourth Generation HEXFET |