IRFZ24NPBF vs IRFR220NPBF Comparación
Comparación detallada lado a lado de IRFZ24NPBF por Infineon y IRFR220NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFZ24NPBF | IRFR220NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,46 | $0,74 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | 5 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 45 W | 43 W |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-220AB (through hole) | — |
| Tipo de montaje | Through Hole | Surface Mount |
| Technology | HEXFET planar cell | HEXFET (Planar) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | — |
| Channel Mode | Enhancement | — |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| Encapsulado / Carcasa | — | TO-252AA (DPAK) |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |
| Recuento de pines | — | 3 (Gate, Drain, Source) plus tab |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |