IRFZ24NPBF vs IRFR220NPBF Comparison
Detailed side-by-side comparison of IRFZ24NPBF by Infineon and IRFR220NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ24NPBF | IRFR220NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.74 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | 5 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-to-Source Voltage (VGS) | Β± 20 V | β |
| RDS(on) at VGS=10V | 70 mOhm (max) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 45 W | 43 W |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (through hole) | β |
| Mounting Type | Through Hole | Surface Mount |
| Technology | HEXFET planar cell | HEXFET (Planar) |
| Switching Frequency Range | Optimized for < 100 kHz | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes (PBF suffix) | β |
| Qualification | JEDEC standard | β |
| Channel Mode | Enhancement | β |
| Static Drain-Source On-Resistance (RDS(on)) max | β | 0.6 ohm at VGS = 10 V |
| Package / Case | β | TO-252AA (DPAK) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Lead-Free / RoHS | β | Yes, lead-free (PBF suffix) |
| Avalanche Energy Rated | β | Yes (per datasheet characterization) |
| Pin Count | β | 3 (Gate, Drain, Source) plus tab |
| MSL Level | β | 1 (per JEDEC J-STD-020) |