IRFZ44NSTRLPBF vs IRLS3034TRLPBF Comparación
Comparación detallada lado a lado de IRFZ44NSTRLPBF por Infineon y IRLS3034TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFZ44NSTRLPBF | IRLS3034TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,93 | $1,55 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 343 A |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | 2.5 V (typical) |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 108 nC |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -40°C to +175°C (TJ) |
| Encapsulado | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET | IR HEXFET (planar N-channel) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25°C | — | 195 A |
| RDS(on) Max at VGS=10V, ID=195A | — | 1.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 375 W |
| Lead-Free | — | Yes (PBF suffix) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Shipping Format | — | Tape and Reel, 7-inch (TRL) |