IRFZ44NSTRLPBF vs IRLS3034TRLPBF Vergleich
Detaillierter Direktvergleich von IRFZ44NSTRLPBF von Infineon und IRLS3034TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ44NSTRLPBF | IRLS3034TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,93 | $1,55 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 343 A |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | 2.5 V (typical) |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | 108 nC |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Betriebstemperaturbereich | -55C to +175C | -40°C to +175°C (TJ) |
| Gehäuse | D2PAK (TO-263) | D2PAK (TO-263), Surface Mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET | IR HEXFET (planar N-channel) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25°C | — | 195 A |
| RDS(on) Max at VGS=10V, ID=195A | — | 1.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 375 W |
| Lead-Free | — | Yes (PBF suffix) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Shipping Format | — | Tape and Reel, 7-inch (TRL) |