IRFZ48NSTRLPBF vs IRFR2405TRLPBF Comparación
Comparación detallada lado a lado de IRFZ48NSTRLPBF por Infineon y IRFR2405TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFZ48NSTRLPBF | IRFR2405TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $0,55 |
| FET Type | N-Channel Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 200 A (typical, per datasheet family) |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 54 nC | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | D2PAK (TO-263) Surface Mount | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel, TRL) | Tape & Reel (TR) |
| Lead Finish | Lead-free (PBF) matte tin | — |
| Estado RoHS | Compliant | — |
| Technology Family | HEXFET advanced process technology | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET, 7th generation) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C (junction) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |