IRFZ48NSTRLPBF vs IRFR2405TRLPBF 비교

다음의 상세 나란히 비교: IRFZ48NSTRLPBF 제조: Infineon 및 IRFR2405TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFZ48NSTRLPBF IRFR2405TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $0.55
FET Type N-Channel Power MOSFET —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 200 A (typical, per datasheet family)
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
동작 접합 온도 -55C to +175C —
패키지 D2PAK (TO-263) Surface Mount TO-252AA (DPAK), 3-pin (2 + Tab)
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) Tape & Reel (TR)
Lead Finish Lead-free (PBF) matte tin —
RoHS 상태 Compliant —
Technology Family HEXFET advanced process technology —
트랜지스터 유형 — N-Channel MOSFET
Technology — HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 56 A
On-Resistance RDS(on) max @ VGS=10V — 16 mOhm
Gate Charge (Qg) typical — 70 nC
Power Dissipation (PD) at Tc — 110 W
Gate-Source Voltage (VGS) max — ±20 V
동작 온도 범위 — -55 C to +175 C (junction)
Avalanche Energy Rated — Yes (HEXFET ruggedized design)
Lead-Free / RoHS — Yes, PBF suffix indicates lead-free and RoHS compliant

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