IRL40S212ARMA1 vs BSC117N08NS5ATMA1 Comparación
Comparación detallada lado a lado de IRL40S212ARMA1 por Infineon y BSC117N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRL40S212ARMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD, Tc) | 231 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET junction) |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 5 |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | 1 (unlimited) | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| Recuento de pines | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |