IRL40S212ARMA1 vs BSC117N08NS5ATMA1 对比
详细并排对比 IRL40S212ARMA1 出自 Infineon 和 BSC117N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRL40S212ARMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.31 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD, Tc) | 231 W | — |
| 工作温度范围 | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET junction) |
| 封装 | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 5 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 等级 | 1 (unlimited) | 1 |
| Part Number | — | BSC117N08NS5ATMA1 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| 引脚数量 | — | 8 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |