IRLL024NTRPBF vs IRLML0030TRPBF Comparación
Comparación detallada lado a lado de IRLL024NTRPBF por Infineon y IRLML0030TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLL024NTRPBF | IRLML0030TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,22 | $0,13 |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | 3.6 nC typical |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | — |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Encapsulado | SOT-223 (4-pin) | Micro3 / SOT-23 (3-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| Estado RoHS | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Nivel MSL | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |