IRLL024NTRPBF vs IRLML0030TRPBF 对比
详细并排对比 IRLL024NTRPBF 出自 Infineon 和 IRLML0030TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLL024NTRPBF | IRLML0030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.22 | $0.13 |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | 3.6 nC typical |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | — |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封装 | SOT-223 (4-pin) | Micro3 / SOT-23 (3-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| 工作温度范围 | — | -55C to +150C |
| MSL 等级 | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |