IRLR2705TRPBF vs IRLR2705TRLPBF Comparación
Comparación detallada lado a lado de IRLR2705TRPBF por Infineon y IRLR2705TRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLR2705TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,32 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 28 A | — |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C with 1in2 copper] | — |
| RDS(on) Max at VGS=10V | 40 mOhm | — |
| RDS(on) Max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute max, +/-V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) | — |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 68 W | — |
| Power Dissipation (PD) at TA=25C | [DATA_NEEDED: PD at TA=25C with 1in2 copper] | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) | IR MOSFET (HEXFET, 5th generation) |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) | — |
| Nivel MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | 1 (unlimited floor life at <30C / 85% RH) |
| Tipo de transistor | — | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |