IRLR9343TRPBF vs IRF7416TRPBF Comparación
Comparación detallada lado a lado de IRLR9343TRPBF por Infineon y IRF7416TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLR9343TRPBF | IRF7416TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,47 | $0,32 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR9343TRPBF | — |
| FET Type | P-Channel MOSFET | P-Channel |
| Technology | IR HEXFET | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | -50 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | -1 V to -3 V |
| Total Gate Charge (Qg) | 31 nC (typical) | 61 nC |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Encapsulado | PG-TO252-3 (DPAK) Surface Mount | 8-SO (SOIC-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj min/max operating range] | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Nivel MSL | 1 | 1 (unlimited) |
| Optimized Application | Class-D audio amplifier output stages | — |
| Polarity | P-Channel | — |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Rango de temperatura de unión de funcionamiento | — | -55 C to +150 C |