IRS21867STRPBF vs IR2109SPBF Comparación
Comparación detallada lado a lado de IRS21867STRPBF por Infineon y IR2109SPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS21867STRPBF | IR2109SPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $1,05 |
| Topología | High-Side and Low-Side (Half-Bridge) | — |
| Offset Voltage (High-Side, max) | 600 V | — |
| Output Current (Source/Sink, typical) | 4 A / 4 A | — |
| Supply Voltage VCC | 10 V to 20 V | — |
| Bootstrap Supply VBS | up to VCC + 600 V (floating) | — |
| Input Logic Compatibility | 3.3 V and 5 V CMOS / TTL | 3.3 V / 5 V CMOS / TTL |
| Rise Time (typ, 1 nF load) | 22 ns | — |
| Fall Time (typ, 1 nF load) | 18 ns | — |
| Turn-On Propagation Delay (typ) | 170 ns | — |
| Turn-Off Propagation Delay (typ) | 170 ns | — |
| Undervoltage Lockout | Yes (VCC and VBS) | Yes (VCC) |
| Operating Temperature Range (TJ) | -40C to +150C | — |
| Encapsulado | 8-SOIC (SOIC-8, 8-pin SOIC N T/R) | SOIC-8 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 2 | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free Status | Lead Free | — |
| Channel Count | 2 (1 high-side + 1 low-side) | — |
| Input Type | Non-Inverting (HIN, LIN) | — |
| Driver Configuration | — | Half-Bridge |
| Number of Drivers | — | 2 (high-side + low-side) |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Tiempo de subida | — | 200 ns |
| Tiempo de bajada | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Bootstrap Diode | — | Integrated |
| Temperatura de unión de funcionamiento | — | -40 C to +150 C |