ISC011N06LM5ATMA1 vs ISC009N06LM5ATMA1 Comparación
Comparación detallada lado a lado de ISC011N06LM5ATMA1 por Infineon y ISC009N06LM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC011N06LM5ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $2,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 60V N-channel trench MOSFET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A | 41 A |
| Continuous Drain Current (ID) at Tc | 288 A | 348 A |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Encapsulado | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 C to +175 C |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |