ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
N.º de pieza: ISC009N06LM5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.45 | $4,45 |
| 10 | $3.96 | $39,60 |
| 100 | $3.51 | $351,00 |
| 500 | $3.18 | $1.590,00 |
| 1.000 | $2.86 | $2.860,00 |
ISC009N06LM5ATMA1 Descripción general
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. OptiMOS 5 is Infineon's fifth-generation 60V-300V trench MOSFET platform, positioned within the broader power MOSFET -> discrete semiconductor -> semiconductor taxonomy. Its hallmark is a 50% lower on-resistance per area versus prior generations, reducing conduction loss in high-current paths.
Key differentiating features include an RDS(on) of 0.9 mOhm max at VGS=10V, an exceptionally low FOM (figure of merit), and an avalanche-rated single-pulse body diode. The PG-TSON-8-3 package exposes a large top-side thermal pad, achieving a junction-to-case thermal resistance (RthJC) well below 1 C/W, which allows direct PCB cooling through copper pours.
Architecturally, the ISC009N06LM5 uses a shielded-gate trench cell structure that minimizes Miller charge (Qg) and gate-drain capacitance, enabling fast switching at high frequencies. According to the Infineon datasheet, the device is optimized for synchronous rectification in switched-mode power supplies (SMPS) where its low Qrr body diode and low Qg keep circulating losses minimal.
Typical applications include high-current synchronous rectification in 48V telecom and server DC-DC converters, OR-ing and hot-swap circuits in server/AI accelerator boards, motor drive half-bridges for industrial automation, USB-PD and high-power battery protection in e-mobility, and solar MPPT power stages. Designers pair this MOSFET with a gate driver such as the Infineon EiceDRIVER 1EDN series for 5V-12V logic-level drive.
When designing with the ISC009N06LM5ATMA1, minimize the high-side source-inductance loop by placing the gate driver and bypass capacitor within 5 mm of the gate and source pins. The exposed pad (PG-TSON-8-3) must be soldered to a copper area of at least 25 mm² on the top layer, with thermal vias connecting to inner ground planes to sustain the 214 W power-dissipation capability.
This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Arrow, parametric cross-reference alternatives, and practical design notes - an information package not consolidated in the manufacturer datasheet alone.
Alternativas directas para ISC009N06LM5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ISC009N06LM5ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →BSC027N06LS5ATMA1
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Ver hoja de datos →BSC036NE7NS3GATMA1
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Ver hoja de datos →ISC011N03L5SATMA1
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Ver hoja de datos →BSC0802NSATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ISC046N13NM6ATMA1
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Ver hoja de datos →ISC009N06LM5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Technology | OptiMOS 5 60V N-channel trench MOSFET |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 41 A |
| Continuous Drain Current (ID) at Tc | 348 A |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm |
| Power Dissipation at Ta (PD) | 3 W |
| Power Dissipation at Tc (PD) | 214 W |
| Rango de temperatura de funcionamiento | -55 C to +175 C |
| Encapsulado | PG-TSON-8-3 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
Configuración de pines de ISC009N06LM5ATMA1
| Pin 1 | S1 (Source) — Source connection 1 (lowest-inductance Kelvin connection) |
| Pin 2 | S2 (Source) — Source connection 2 |
| Pin 3 | S3 (Source) — Source connection 3 |
| Pin 4 | G (Gate) — Gate drive input - connect via 10-100 ohm gate resistor to driver output |
| Pin 5 | S4 (Source) — Source connection 4 |
| Pin 6 | S5 (Source) — Source connection 5 |
| Pin 7 | S6 (Source) — Source connection 6 |
| Pin 8 | S7 (Source) — Source connection 7 |
| Pin EP | D (Drain) - Exposed Pad — Drain connection via exposed bottom thermal pad - must be soldered to PCB copper pour for thermal dissipation |
Área de funcionamiento seguro (DC continuous)
Aplicaciones típicas
ISC009N06LM5ATMA1 es adecuado para 6 aplicacións: 48V Telecom & Server Synchronous Rectification, USB-PD & High-Power Battery Protection, Industrial Motor Drive Half-Bridge, Solar MPPT Power Stage, AI Accelerator & GPU VR Stage, Automotive 48V Mild-Hybrid eMobility.
48V Telecom & Server Synchronous Rectification
The ISC009N06LM5ATMA1's 0.9 mOhm RDS(on) and 348 A Tc-rated current make it ideal as the low-side synchronous rectifier in 48V-input to 12V/5V intermediate-bus DC-DC converters used in telecom rectifiers and server/AI-accelerator power rails. The OptiMOS 5 technology reduces conduction loss by ~50% vs OptiMOS 4 at equivalent footprint, directly cutting P_c = I² x RDS(on) in high-current paths. Designers place this MOSFET across the secondary-side inductor return with a 1EDN gate driver, achieving >97% peak efficiency. The 60V VDS rating comfortably exceeds the 48V nominal plus 20% transient overshoot. Thermal performance relies on top-side copper pours of at least 25 mm² plus thermal vias to inner ground planes.
Recomendado
USB-PD & High-Power Battery Protection
In USB-Power-Delivery (PD 3.1) EPR designs delivering 28V/36V/48V at 5A, the ISC009N06LM5ATMA1 functions as the hot-swap and reverse-polarity protection MOSFET. Its 60V VDS rating covers the full PD 3.1 EPR range with margin, while 0.9 mOhm RDS(on) keeps I²R drop under 50 mV at 5A (well within USB-C VTYP cable limits). The PG-TSON-8-3 footprint occupies less than 30 mm² PCB area, enabling compact laptop docking stations. Designers pair this MOSFET with bidirectional current-sense amplifiers for OCP/OVP loops, leveraging the 41 A Ta continuous rating for safe derated operation at the PD's 5A nominal load. Battery-pack BMS modules use it as the high-side disconnect switch with the exposed pad dissipating short-circuit surge events.
Recomendado
Industrial Motor Drive Half-Bridge
The ISC009N06LM5ATMA1 serves as the high-side or low-side switch in 24V/48V industrial BLDC and stepper motor half-bridges used in factory automation, robotics, and CNC equipment. Its 348 A pulse-current capability absorbs motor inrush and back-EMF recovery spikes, while the 60V VDS provides a 25% margin above typical 48V industrial bus voltages. Low Qg (~50 nC typical) enables PWM frequencies up to 100 kHz, reducing audible motor whine and shrinking output-filter inductance. The PG-TSON-8-3's exposed pad allows direct PCB mounting to a heatsink-less copper plane, simplifying mechanical integration in IPM-style modules. Designers implement dead-time insertion of ~100 ns to prevent shoot-through, leveraging the MOSFET's fast body-diode reverse recovery.
Recomendado
Solar MPPT Power Stage
In solar photovoltaic micro-inverters and MPPT charge controllers operating from 30-60V panel strings, the ISC009N06LM5ATMA1 handles the synchronous-rectifier role in the boost-stage or the full-bridge inverter stage. Its ultra-low 0.9 mOhm RDS(on) minimizes conduction loss - critical in solar systems where every percentage point of efficiency translates directly to annual kWh harvest. The device's 175 C maximum junction temperature allows operation in hot rooftop enclosures without active cooling, while the 60V rating tolerates open-circuit voltage transients of 48V panels under cold conditions (Voc rises ~13% at -10C). The exposed top-side pad enables thermal coupling to a heatsink or aluminum enclosure.
Recomendado
AI Accelerator & GPU VR Stage
The ISC009N06LM5ATMA1 is deployed as the synchronous rectifier in the multi-phase buck VR stages powering AI accelerators (e.g. GPU/CPU VCORE) in data-center accelerator cards. With per-phase currents exceeding 80 A peak and 5-8 phases in parallel, the MOSFET's 0.9 mOhm RDS(on) and 348 A Tc rating support the paralleling needed for 500+ A aggregate output. The OptiMOS 5 figure-of-merit (FOM = RDS(on) x Qg) minimizes switching loss at 500 kHz-1 MHz switching frequencies, enabling dense VRMs with minimal inductor size. Thermal management uses the PG-TSON-8-3 exposed pad coupled to multiple thermal vias and a top-side heatsink for sustained load conditions.
Recomendado
Automotive 48V Mild-Hybrid eMobility
The ISC009N06LM5ATMA1 supports 48V mild-hybrid (MHEV) automotive power systems including DC-DC converters bridging 48V to 12V buses, and electric turbo or e-supercharger inverters. Its 60V VDS rating provides margin above the 48V MHEV nominal, while the OptiMOS 5 technology delivers the low conduction loss needed for high-power-density converters under the hood. For AEC-Q100 qualified versions, designers select Infineon's ISC automotive-grade equivalent. The PG-TSON-8-3's small footprint enables integration into compact ECUs and power-distribution units. The exposed top-side pad couples to aluminum housing for passive cooling, surviving the 125 C ambient under-hood temperatures.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ISC009N06LM5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | ISC0805NLSATMA1 | BSC027N06LS5ATMA1 | BSC036NE7NS3GATMA1 | ISC058N04NM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same | PG-TSON-8-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage VDS (V) | 60 V | 60 V | 60 V | 75 V | 40 V | 30 V |
| RDS(on) max at VGS=10V (mOhm) | 0.9 mOhm | 8.0 mOhm | 2.7 mOhm | 3.6 mOhm | 0.58 mOhm | 1.1 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Ultra-low RDS(on) at 60V in PG-TSON-8-3 (frente a ISC0805NLSATMA1)
- 60V VDS optimized for 48V telecom/server rails (frente a ISC058N04NM5ATMA1 (40V))
- OptiMOS 5 generation FOM optimization (frente a BSC036NE7NS3GATMA1 (OptiMOS 5 75V))
Notas de diseño
Estimated: at continuous 348 A (Tc) with 0.9 mOhm RDS(on), conduction loss reaches P = I² x R = 348² x 0.0009 = ~109 W. With the 214 W Tc power-dissipation rating and the PG-TSON-8-3's exposed thermal pad (RthJC below 1 C/W), designers MUST solder the exposed pad to a top-side copper pour of at least 25 mm² and connect that pad to inner ground planes via a 4x4 grid of 0.3 mm thermal vias. Without this, junction temperature will exceed the 175 C limit and trigger thermal shutdown. In multi-phase designs (e.g. 8-phase VR), distribute phases to prevent local hotspot concentration.
Minimize the high-side source-inductance loop by placing the gate-driver bypass capacitor within 5 mm of pins 4 (G) and the source pads. The PG-TSON-8-3 package has multiple source pins (S1-S7) - use them all in parallel to minimize bond-wire inductance. Estimated: every 1 nH of source inductance adds ~10 V of VDS overshoot at 100 A/ns switching speeds. Route the gate-drive trace on an inner layer directly beneath the top-side source pour to provide a return-path capacitance and reduce EMI. Star-ground the gate-driver ground to the source pad, not to the system ground.
Do not exceed VGS = +/-20 V on the gate - static discharge from handling can permanently damage the thin gate oxide. Always use a 10 kohm gate-source resistor for pull-down during power-down to prevent parasitic turn-on from Miller coupling. Estimated: at 0.9 mOhm, even small solder-joint voids can increase thermal resistance by 30% - follow IPC-A-610 acceptance criteria and use X-ray inspection for production. The 60V VDS rating is the absolute maximum - sustained operation at VDS > 48V requires thermal de-rating per the datasheet Diagram 2 SOA curve.
The fast switching edges (rise/fall times <5 ns achievable with this MOSFET) generate EMI from 100 MHz to several GHz. Use a snubber (1 nF + 5 ohm) across the drain-source if the application has high dV/dt sensitivity. Common-mode chokes on the DC bus help pass CISPR 22 / FCC Part 15 conducted emissions. The OptiMOS 5 family's low Qrr body diode reduces reverse-recovery ringing - an EMI benefit over older MOSFET generations. Estimated: with proper layout, EMI below 30 dBuV is achievable for a 48V to 12V/30A design.
Información de cumplimiento
RoHS compliant per DigiKey/Infineon product page. AEC-Q100 not qualified in the standard version - select ISC automotive-grade equivalent for vehicular applications. Halogen-free per Infineon material declaration.
