ISC060N06NM6ATMA1 vs ISC015N06NM5LF2ATMA1 Comparación
Comparación detallada lado a lado de ISC060N06NM6ATMA1 por Infineon y ISC015N06NM5LF2ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ ActivoInfineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC060N06NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,33 | $2,21 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | 32 A |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 50 W | 217 W |
| Encapsulado | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Configuration | Single N-Channel | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction, per OptiMOS 6 family) | — |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 3 V |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | 90 nC |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| RoHS | — | Compliant |