ISC080N10NM6ATMA1 vs IAUT300N08S5N012ATMA2 Comparación
Comparación detallada lado a lado de ISC080N10NM6ATMA1 por Infineon y IAUT300N08S5N012ATMA2 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ ActivoComparación de especificaciones
| Parámetro | ISC080N10NM6ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,05 | $2,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 6 100V | OptiMOS™-5 80 V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Ta | 13 A | — |
| Continuous Drain Current (ID) at Tc | 75 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 1200 A (per datasheet, typical) |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 µA | — |
| Encapsulado | PG-TDSON-8 FL (TDSON EP) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ max, per datasheet) | -55 °C to +175 °C (TJ) |
| Nivel MSL | 1 (per JEDEC J-STD-020, per datasheet) | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | — |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |