ISC300N20NM6ATMA1 vs ISC011N04NM7VATMA1 Comparación
Comparación detallada lado a lado de ISC300N20NM6ATMA1 por Infineon y ISC011N04NM7VATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC300N20NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,15 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 200V | OptiMOS 7 Power-Transistor |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TC | 44 A | 256 A |
| Continuous Drain Current (ID) at Ta | 6.5 A | — |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Encapsulado | PG-TDSON-8 | PG-TDSON-8 (source-down) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | Trench MOSFET, silicon |
| Operating Mode | Enhancement | — |
| Estado RoHS | Compliant | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Rango de temperatura de funcionamiento | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| Nivel MSL | — | MSL 1 (per JEDEC J-STD-020) |