ISC300N20NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISC300N20NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC300N20NM6ATMA1

ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon

ISC300N20NM6ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISC300N20NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.15 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 200V OptiMOS 7 Power-Transistor
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 200 V 40 V
Continuous Drain Current (ID) at TC 44 A 256 A
Continuous Drain Current (ID) at Ta 6.5 A β€”
Power Dissipation (PD) at TC 136 W β€”
Power Dissipation (PD) at Ta 3 W β€”
Drain-Source On-Resistance (RDS(on)) 27 mΞ© (typical) β€”
Gate Threshold Voltage (VGS(th)) 4.5 V β€”
Package PG-TDSON-8 PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 6 Trench MOSFET, silicon
Operating Mode Enhancement β€”
RoHS Status Compliant β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
Operating Temperature Range β€” -55 Β°C to +175 Β°C (TJ)
RoHS Compliance β€” Compliant (per Infineon product page)
MSL Level β€” MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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