ISZ019N03L5SATMA1 vs BSC009NE2LS5IATMA1 Comparación
Comparación detallada lado a lado de ISZ019N03L5SATMA1 por Infineon y BSC009NE2LS5IATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ ActivoInfineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISZ019N03L5SATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | — |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | — |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| Encapsulado | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (TJ max) | -55°C to +150°C |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| Manufacturer Part Number | — | BSC009NE2LS5IATMA1 |
| Technology | — | OptiMOS™ 5 (25V/30V family) |
| Tipo de transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | — | 25 V |
| Gate-Source Voltage (V_GS) max | — | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | — | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | — | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | — | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | — | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | — | 2.5 W |
| Power Dissipation (P_D) @ T_C | — | 74 W |
| Total Gate Charge (Q_G) typ | — | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | — | 3200 pF |
| Terminal Finish | — | Matte Tin (e3 per JESD-609) |
| Number of Terminals | — | 8 |
| Estado RoHS | — | Compliant |