K3KL3L30CM-BGCT vs K3KL2L20DM-JGCT Comparación
Comparación detallada lado a lado de K3KL3L30CM-BGCT por Samsung Electronics y K3KL2L20DM-JGCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K3KL3L30CM-BGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $20,80 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 64 Gbit | 48 Gb |
| Organización de memoria | x64 | x64 |
| Speed Grade | LPDDR5X-7500 (7500 MT/s) | — |
| Technology | Stacked DRAM die, mobile BGA | — |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Encapsulado | [DATA_NEEDED: exact package code and ball count] | 441-ball FBGA |
| Core Voltage | [DATA_NEEDED: VDD core voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| Standards Compliance | JEDEC LPDDR5X specification | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Class | Mobile / embedded main memory | — |
| Velocidad de datos | — | 7500 Mbps |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Interfaz | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |