K3KL3L30CM-BGCT vs K3KL2L20DM-JGCT Vergleich
Detaillierter Direktvergleich von K3KL3L30CM-BGCT von Samsung Electronics und K3KL2L20DM-JGCT von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K3KL3L30CM-BGCT | K3KL2L20DM-JGCT |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $20,80 |
| Speichertyp | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 64 Gbit | 48 Gb |
| Speicherorganisation | x64 | x64 |
| Speed Grade | LPDDR5X-7500 (7500 MT/s) | — |
| Technology | Stacked DRAM die, mobile BGA | — |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Gehäuse | [DATA_NEEDED: exact package code and ball count] | 441-ball FBGA |
| Core Voltage | [DATA_NEEDED: VDD core voltage] | — |
| I/O Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Refresh | [DATA_NEEDED: refresh scheme] | — |
| Standards Compliance | JEDEC LPDDR5X specification | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Application Class | Mobile / embedded main memory | — |
| Datenrate | — | 7500 Mbps |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Schnittstelle | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |