K3KL8L80QM-MUCT vs K3KL8L80CM-MGCT Comparación
Comparación detallada lado a lado de K3KL8L80QM-MUCT por Samsung Electronics y K3KL8L80CM-MGCT por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K3KL8L80QM-MUCT | K3KL8L80CM-MGCT |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $13,40 | $0,00 |
| Tipo de memoria | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 32 Gbit (4 GB) |
| Organización de memoria | [DATA_NEEDED: organization (xN bit width)] | x32 |
| Velocidad de datos | [DATA_NEEDED: data rate per pin (Gbps)] | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Speed Grade | QM (per Samsung part numbering) | — |
| Encapsulado | FBGA (original package, 315-ball class) | 315-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Interfaz | LPDDR5X channel interface | LPDDR5X (JEDEC LPDDR5 extension) |
| Series | LPDDR5X | — |
| Marca | Samsung Semiconductor | — |
| Packaging Suffix | MUCT | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| Application Segment | Mobile / AI edge computing | Mobile, Automotive, On-device AI, PC |
| Max Data Rate | — | 7500 Mbps |
| Clock Frequency | — | 3750 MHz |
| Core Supply Voltage (VDD) | — | 1.05 V |
| I/O Supply Voltage (VDDQ) | — | 900 mV (500 mV low-power mode) |
| VDD2 Supply Voltage | — | 1.8 V |
| Power Efficiency | — | ~20-25% improvement vs LPDDR5 (per Samsung) |