K3LK4L40DM-BGCT vs MT40A512M8RH-075E:B Comparación
Comparación detallada lado a lado de K3LK4L40DM-BGCT por Samsung Electronics y MT40A512M8RH-075E:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ ActivoMicron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | K3LK4L40DM-BGCT | MT40A512M8RH-075E:B |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $40,50 | $2,15 |
| Tipo de memoria | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 4 Gbit |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Velocidad de datos | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Nivel MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organización de memoria | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Tipo de interfaz | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tensión de referencia | — | On-die internal adjustable VREFDQ generation |
| Encapsulado | — | 78-FBGA (9 x 10.5 mm), TFBGA |
| Refresh | — | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |