K3LK4L40DM-BGCT vs MT40A512M8RH-075E:B Comparação
Comparação detalhada lado a lado de K3LK4L40DM-BGCT por Samsung Electronics e MT40A512M8RH-075E:B por Micron Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ AtivoMicron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ AtivoComparação de especificações
| Parâmetro | K3LK4L40DM-BGCT | MT40A512M8RH-075E:B |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoria | DRAM | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $40,50 | $2,15 |
| Tipo de memória | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 4 Gbit |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Taxa de dados | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latência CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Nível MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organização da memória | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Tipo de interface | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tensão de referência | — | On-die internal adjustable VREFDQ generation |
| Encapsulamento | — | 78-FBGA (9 x 10.5 mm), TFBGA |
| Refresh | — | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |