K4B4G1646E-BYK000 vs MT41K128M16JT-125:K Comparación
Comparación detallada lado a lado de K4B4G1646E-BYK000 por Samsung Electronics y MT41K128M16JT-125:K por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActivoMicron Technology
MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology
MT41K128M16JT-125:K ✓ ActivoComparación de especificaciones
| Parámetro | K4B4G1646E-BYK000 | MT41K128M16JT-125:K |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,56 | $9,75 |
| Tipo de memoria | DDR3L SDRAM | DDR3L SDRAM |
| Tamaño de memoria | 4 Gbit | — |
| Organización de memoria | 256M x 16 | 128M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 800 MHz (1600 MT/s data rate) |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | 1.35 V (1.283 V to 1.45 V) |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Encapsulado | 96-FBGA (BYK) | 96-FBGA (8x14 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | Parallel | Parallel |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Características | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Access Time | 1.25 ns | — |
| Memory Capacity | — | 2 Gbit |
| Access Time (Clock Cycle) | — | 13.75 ns |
| Prefetch Architecture | — | 8n-bit |
| Self Refresh | — | Auto self-refresh |
| Write Leveling | — | Supported |
| Data Mask | — | Supported |
| On-Die Termination | — | Dynamic ODT supported |
| Asynchronous Reset | — | Supported |