K6X1008C2D-BF70 vs K6X1008C2D-GF70 Comparación
Comparación detallada lado a lado de K6X1008C2D-BF70 por Samsung Electronics y K6X1008C2D-GF70 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndSamsung Electronics
K6X1008C2D-GF70 - 1Mbit 70ns 32-SOP Low Power SRAM | Samsung
K6X1008C2D-GF70 ObsoleteComparación de especificaciones
| Parámetro | K6X1008C2D-BF70 | K6X1008C2D-GF70 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | NRND | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $1,30 |
| Tipo de memoria | Volatile SRAM (asynchronous, static) | Asynchronous SRAM (CMOS, Low Power) |
| Memory Organization | 128K x 8 (1 Mbit total) | — |
| Number of Words | 131,072 | — |
| Bits per Word | 8 | — |
| Access Time | 70 ns | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Tipo de interfaz | Parallel, asynchronous | — |
| I/O Compatibility | TTL-compatible | — |
| Operating Mode | Fully static (no clock, no refresh) | — |
| Package Type | 32-SOP-525 (PDSO32) | — |
| Speed Grade Suffix | BF70 (= 70 ns) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: temperature grade] | Commercial (I) / Automotive (a) - per ordering code |
| Active Supply Current (ICC) | [DATA_NEEDED: ICC max] | — |
| CMOS Standby Current (ICC2) | [DATA_NEEDED: ICC2 max] | — |
| Output Enable (OE) Pin | Yes (three-state outputs) | — |
| Write Enable (WE) Pin | Yes | — |
| Chip Enable (CE) Pin | Yes | — |
| Lead-Free Finish | Yes (per datasheet revision history) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | Low-power CMOS | Samsung full CMOS (6T cell) |
| Memory Density | — | 1 Mbit (128K x 8) |
| Organización de memoria | — | 128K x 8 |
| Access Time (tAA) | — | 70 ns |
| Operating Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current (Icc) | — | 35 mA |
| Data Retention Voltage | — | [DATA_NEEDED: data retention voltage minimum VccDR] |
| Data Retention Current | — | [DATA_NEEDED: data retention current at 3 V / 2 V] |
| Encapsulado | — | 32-SOP (PDSO32, 0.525 inch, plastic) |
| Interfaz | — | Parallel, asynchronous |
| Tipo de salida | — | Three-state bidirectional |
| Input/Output Logic | — | TTL-compatible |
| Nivel MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |
| Estado RoHS | — | [DATA_NEEDED: RoHS compliance status from manufacturer] |
| Standby Mode | — | Chip Enable (CE) controlled |