K9CHGY8S5C-BCK0 vs K9CHGY8S5C-CCK0 Comparación
Comparación detallada lado a lado de K9CHGY8S5C-BCK0 por Samsung Electronics y K9CHGY8S5C-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics
K9CHGY8S5C-BCK0 UnknownSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9CHGY8S5C-BCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Unknown | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series NAND Flash | — |
| Tipo de memoria | NAND Flash | — |
| Density | [DATA_NEEDED: total density] | [DATA_NEEDED: total density in Gb] |
| Organización de memoria | [DATA_NEEDED: page/block organization] | x8 (8-bit data access), quad CE configuration |
| Bus Width | [DATA_NEEDED: x8 or x16] | — |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | — |
| Tipo de interfaz | [DATA_NEEDED: asynchronous/toggle DDR] | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Read Cycle Time | [DATA_NEEDED: tRC] | — |
| Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Package Type | [DATA_NEEDED: package code and dimensions] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount | Surface Mount (BGA reflow) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Ordering Code Suffix | -BCK0 | — |
| Product Type | — | NAND Flash Memory |
| Encapsulado | — | BGA-316 |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Page Size | — | [DATA_NEEDED: page size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |