K9CHGY8S5C-BCK0 vs K9CHGY8S5C-CCK0 对比

详细并排对比 K9CHGY8S5C-BCK0 出自 Samsung Electronics 和 K9CHGY8S5C-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9CHGY8S5C-BCK0 K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 Unknown
Samsung Electronics
K9CHGY8S5C-CCK0 K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung

K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung

K9CHGY8S5C-CCK0 ✓ 量产中

规格对比

参数 K9CHGY8S5C-BCK0 K9CHGY8S5C-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Unknown 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash —
存储器类型 NAND Flash —
Density [DATA_NEEDED: total density] [DATA_NEEDED: total density in Gb]
存储组织 [DATA_NEEDED: page/block organization] x8 (8-bit data access), quad CE configuration
Bus Width [DATA_NEEDED: x8 or x16] —
电源电压 [DATA_NEEDED: VCC range] —
接口类型 [DATA_NEEDED: asynchronous/toggle DDR] [DATA_NEEDED: toggle DDR / ONFI, max data rate]
Read Cycle Time [DATA_NEEDED: tRC] —
Program Time [DATA_NEEDED: tPROG] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: program/erase cycles] —
Package Type [DATA_NEEDED: package code and dimensions] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount (BGA reflow)
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Ordering Code Suffix -BCK0 —
Product Type — NAND Flash Memory
封装 — BGA-316
Chip Enable Count — 16 (CE_n)
Pin Reduction — Not used
Supply Rail VCC — 1.83 V
Supply Rail (secondary) — 1.84 V
Supply Rail VCCQ-class — 2.96 V
Program/Erase Supply Rail — 12 V domain
Memory Technology — [DATA_NEEDED: cell type / V-NAND generation]
Page Size — [DATA_NEEDED: page size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance]

数据手册与资源

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