K9CHGY8S5C-BCK0 vs K9CHGY8S5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9CHGY8S5C-BCK0 par Samsung Electronics et K9CHGY8S5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics
K9CHGY8S5C-BCK0 UnknownSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9CHGY8S5C-BCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Unknown | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series NAND Flash | — |
| Type de mémoire | NAND Flash | — |
| Density | [DATA_NEEDED: total density] | [DATA_NEEDED: total density in Gb] |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | x8 (8-bit data access), quad CE configuration |
| Bus Width | [DATA_NEEDED: x8 or x16] | — |
| Tension d'alimentation | [DATA_NEEDED: VCC range] | — |
| Type d'interface | [DATA_NEEDED: asynchronous/toggle DDR] | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Read Cycle Time | [DATA_NEEDED: tRC] | — |
| Program Time | [DATA_NEEDED: tPROG] | — |
| Block Erase Time | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Package Type | [DATA_NEEDED: package code and dimensions] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount (BGA reflow) |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Ordering Code Suffix | -BCK0 | — |
| Product Type | — | NAND Flash Memory |
| Boîtier | — | BGA-316 |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Page Size | — | [DATA_NEEDED: page size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |