K9CHGY8S5C-CCK0 vs K9CHGY8S5C-BCK0 Comparación
Comparación detallada lado a lado de K9CHGY8S5C-CCK0 por Samsung Electronics y K9CHGY8S5C-BCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActivoSamsung Electronics
K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics
K9CHGY8S5C-BCK0 UnknownComparación de especificaciones
| Parámetro | K9CHGY8S5C-CCK0 | K9CHGY8S5C-BCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Unknown |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Encapsulado | BGA-316 | — |
| Organización de memoria | x8 (8-bit data access), quad CE configuration | [DATA_NEEDED: page/block organization] |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total density] |
| Tipo de interfaz | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | [DATA_NEEDED: asynchronous/toggle DDR] |
| Page Size | [DATA_NEEDED: page size] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Tipo de montaje | Surface Mount (BGA reflow) | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Product Family | — | K9-series NAND Flash |
| Tipo de memoria | — | NAND Flash |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Tensión de alimentación | — | [DATA_NEEDED: VCC range] |
| Read Cycle Time | — | [DATA_NEEDED: tRC] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Package Type | — | [DATA_NEEDED: package code and dimensions] |
| Ordering Code Suffix | — | -BCK0 |