K9CHGY8S5C-CCK0 vs K9CHGY8S5C-BCK0 对比

详细并排对比 K9CHGY8S5C-CCK0 出自 Samsung Electronics 和 K9CHGY8S5C-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9CHGY8S5C-CCK0 K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung

K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung

K9CHGY8S5C-CCK0 ✓ 量产中
Samsung Electronics
K9CHGY8S5C-BCK0 K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 Unknown

规格对比

参数 K9CHGY8S5C-CCK0 K9CHGY8S5C-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 Unknown
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Type NAND Flash Memory —
封装 BGA-316 —
存储组织 x8 (8-bit data access), quad CE configuration [DATA_NEEDED: page/block organization]
Chip Enable Count 16 (CE_n) —
Pin Reduction Not used —
Supply Rail VCC 1.83 V —
Supply Rail (secondary) 1.84 V —
Supply Rail VCCQ-class 2.96 V —
Program/Erase Supply Rail 12 V domain —
Memory Technology [DATA_NEEDED: cell type / V-NAND generation] —
Density [DATA_NEEDED: total density in Gb] [DATA_NEEDED: total density]
接口类型 [DATA_NEEDED: toggle DDR / ONFI, max data rate] [DATA_NEEDED: asynchronous/toggle DDR]
Page Size [DATA_NEEDED: page size] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
安装类型 Surface Mount (BGA reflow) Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Program/Erase Cycles [DATA_NEEDED: P/E endurance] —
Product Family — K9-series NAND Flash
存储器类型 — NAND Flash
Bus Width — [DATA_NEEDED: x8 or x16]
电源电压 — [DATA_NEEDED: VCC range]
Read Cycle Time — [DATA_NEEDED: tRC]
Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: program/erase cycles]
Package Type — [DATA_NEEDED: package code and dimensions]
Ordering Code Suffix — -BCK0

数据手册与资源

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