K9CHGY8S5C-CCK0 vs K9CHGY8S5C-BCK0 Comparaison
Comparaison détaillée côte à côte de K9CHGY8S5C-CCK0 par Samsung Electronics et K9CHGY8S5C-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifSamsung Electronics
K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics
K9CHGY8S5C-BCK0 UnknownComparaison des spécifications
| Paramètre | K9CHGY8S5C-CCK0 | K9CHGY8S5C-BCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Unknown |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Boîtier | BGA-316 | — |
| Organisation de la mémoire | x8 (8-bit data access), quad CE configuration | [DATA_NEEDED: page/block organization] |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total density] |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | [DATA_NEEDED: asynchronous/toggle DDR] |
| Page Size | [DATA_NEEDED: page size] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Type de montage | Surface Mount (BGA reflow) | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Product Family | — | K9-series NAND Flash |
| Type de mémoire | — | NAND Flash |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| Tension d'alimentation | — | [DATA_NEEDED: VCC range] |
| Read Cycle Time | — | [DATA_NEEDED: tRC] |
| Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Package Type | — | [DATA_NEEDED: package code and dimensions] |
| Ordering Code Suffix | — | -BCK0 |