K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung
N.º de pieza: K9EUGY8S0M-CCK0 ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9EUGY8S0M-CCK0 Descripción general
NAND flash is a non-volatile memory category within the broader memory-IC hierarchy (NAND flash -> solid-state storage memory -> semiconductor memory). Unlike NOR flash, NAND cells are connected in series, enabling higher density and faster program/erase throughput at the cost of random-access speed. Raw NAND requires a host controller that manages page programming, block erasure, bad-block management, wear leveling, and ECC (LDPC in modern controllers) per the ONFI-style toggle DDR interface timing used by Samsung V-NAND.
Key characteristics of this device family include a toggle-mode DDR interface for high-bandwidth data transfer, TLC (triple-level cell) storage providing 3 bits per cell for maximum density, and multi-die stacked organization inside a single package to reach 256 Gb of usable capacity. The CCK0 suffix denotes Samsung's standard commercial-grade processing and packaging option; the sibling BCK0 variant in the same family differs by package processing/temperature option, and both are commonly designed into SSD and embedded storage BOMs.
The vertical gate stack of 128-layer V-NAND reduces cell-to-cell interference compared with planar TLC at equivalent density, improving endurance and retention margins. Program and erase operations are command-driven through the controller with ready/busy handshaking, and the device supports internal multi-plane operation for parallelism during program, erase, and read operations.
Typical applications include client SSDs, embedded USB flash drives, memory cards, industrial storage modules, set-top boxes, and any storage subsystem where a controller-managed raw NAND die stream is required. The 256 Gb TLC density makes it attractive for 128 GB to 512 GB consumer storage tiers.
Design considerations: raw NAND must not be connected directly to a general-purpose bus - a dedicated NAND controller with LDPC/ECC engine, valid power-fail sequencing, and appropriate VCC/VCCQ decoupling is mandatory. Verify the exact package dimensions, ball map, interface voltage, and timing specifications against the official Samsung datasheet before layout.
This page synthesizes verified distributor listings, same-family cross-reference options, and practical sourcing guidance not consolidated in the manufacturer documentation.
Alternativas directas para K9EUGY8S0M-CCK0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K9EUGY8S0M-CCK0 (mismo factor de forma y huella) — difiere en Memory Type, Product Family, Mounting Type, Product Type, RoHS Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K9EUGY8S0M-BCK0
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Ver hoja de datos →K9DUGY8S0M-CCK0
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Ver hoja de datos →K9CHGY8S5C-CCK0
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Ver hoja de datos →K9EUGY8S0M-CCK0 Valores máximos y características eléctricas
| Manufacturer | Samsung Electronics |
| Product Type | 3D TLC V-NAND Flash Memory |
| Cell Type | TLC (3 bits per cell) |
| Grade Suffix | CCK0 (standard commercial grade) |
| Tipo de montaje | Surface Mount (BGA) |
Guía de configuración de pines de K9EUGY8S0M-CCK0 standard
Configuración de pines para K9EUGY8S0M-CCK0 (encapsulado standard). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K9EUGY8S0M-CCK0.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K9EUGY8S0M-CCK0 es adecuado para 6 aplicacións: Client SSD Storage, Embedded USB Flash Drives, Memory Cards, Industrial Storage Modules, Set-Top Box and Smart TV Storage, Networking and Router Storage.
Client SSD Storage
The K9EUGY8S0M-CCK0 fits client SSD designs where 256 Gb-class TLC V-NAND provides the best balance of density, endurance, and per-bit cost for mainstream consumer capacity points. Placed behind an SSD controller with an LDPC ECC engine, the TLC cells deliver multi-terabyte DWPD-class endurance appropriate for boot and general-purpose drives. Its toggle-mode interface sustains the sequential bandwidth that PCIe and SATA controllers expect, and multi-plane operation parallelizes program and erase to keep queue depths serviced. Designers should verify the controller's supported NAND profile list includes this Samsung generation before board bring-up.
Recomendado
Embedded USB Flash Drives
USB flash controller vendors pair K9EUGY8S0M-CCK0-class TLC V-NAND with single-chip USB 3.x controllers to build 32 GB-per-die-tier flash drives. The 256 Gb density keeps the BOM to one or two packages for mainstream capacities, cutting cost and PCB area versus lower-density planar NAND. Because USB controllers handle ECC, wear leveling, and bad-block management internally, the raw V-NAND drops into a reference design with minimal firmware change - provided the controller firmware image supports this Samsung generation's toggle timing. Thermal design should confirm the FBGA stays within datasheet limits under sustained sequential write loads.
Recomendado
Memory Cards
SD and microSD card manufacturers use K9EUGY8S0M-CCK0-class 256 Gb TLC V-NAND inside molded card assemblies, where package height and power draw are tightly constrained. V-NAND's vertical stack delivers high capacity in a small footprint, and TLC density keeps per-card BOM cost competitive in consumer price tiers. The card controller manages program/erase cycling and LDPC decoding, so the NAND must appear on the controller's qualified list. Designers should validate that read current stays within the card's power budget on mobile hosts, and confirm grade-suffix definitions cover the consumer temperature envelope for the target card class.
Recomendado
Industrial Storage Modules
In industrial storage - rugged SSDs, logging recorders, and embedded modules - K9EUGY8S0M-CCK0 serves as the storage element behind an industrial controller with enhanced ECC and power-fail protection. TLC V-NAND suits read-mostly and moderate-write industrial workloads; write-heavy logging should employ SLC-cache firmware or pSLC mode where the controller supports it. Verify the CCK0 grade's operating temperature range against the module spec, and design power-fail circuitry so in-flight program operations do not corrupt data. Industrial customers typically require vendor-managed change notification, so confirm Samsung lifecycle status before design-in.
Recomendado
Set-Top Box and Smart TV Storage
Set-top boxes and smart TVs store firmware, channel databases, and DVR buffers on K9EUGY8S0M-CCK0-class raw TLC V-NAND connected to an SoC's integrated NAND controller. The 256 Gb density covers typical 8-32 GB eMMC-class capacity requirements with a single stacked package, and TLC cost meets consumer BOM targets. SoC boot ROMs usually require a specific toggle-mode profile, so confirm the SoC's supported Samsung NAND list. Because these products run continuous background recording, wear-leveling configuration and TV-logging write amplification should be tuned to keep TLC endurance within the 3-5 year product lifetime.
Recomendado
Networking and Router Storage
Enterprise Wi-Fi routers, mesh nodes, and NVR gateways use K9EUGY8S0M-CCK0-class V-NAND for firmware image storage, container filesystems, and local video buffering. The TLC density enables feature-rich firmware images plus persistent journals without a separate NOR boot device in many designs (boot code typically remains in NOR/SPINOR, with rootfs on this NAND). Raw NAND requires the SoC's NAND controller to implement ECC and bad-block handling at boot; verify the bootloader chain supports this Samsung generation. Consider temperature derating for passive-cooled network equipment enclosures, since sustained DVR writes heat the FBGA above ambient.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K9EUGY8S0M-CCK0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K9EUGY8S0M-BCK0 | K9DUGY8S0M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|---|---|
| Package | FBGA (Samsung V-NAND molded BGA) | FBGA - same family package | FBGA - same family package | FBGA - same family package |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC (3 bits/cell) | TLC | TLC | TLC |
| Grade Suffix | CCK0 | BCK0 | CCK0 | CCK0 |
| Controller Firmware Requirement | Samsung NAND profile in controller support list | Same profile requirement | K9DU profile | K9CH profile |
| Primary Use Case | SSD / USB / embedded storage | SSD / USB / embedded storage | Cost-optimized storage builds | Alternate density tiers |
Diferenciadores clave
- Latest same-die family sourcing option (frente a K9DUGY8S0M-CCK0)
- Dual-sourcing within identical silicon (frente a K9EUGY8S0M-BCK0)
- CCK0 grade consistency (frente a K9CHGY8S5C-CCK0)
Notas de diseño
Never connect K9EUGY8S0M-CCK0 directly to a general-purpose bus. As raw TLC V-NAND, it requires a dedicated controller or SoC NAND engine providing LDPC/ECC, bad-block management, wear leveling, and correct toggle-mode timing. Using a controller firmware that does not list this Samsung generation in its supported NAND profile table will cause boot failures or silent data corruption. Always validate with the controller vendor's qualification suite before mass production.
NAND devices in this family use separate core and I/O supplies (VCC and VCCQ) with defined power-up sequencing in the Samsung datasheet. Because the exact voltage values for this MPN are NDA datasheet items, do not copy rail voltages from older-generation schematics - obtain the K9EUGY8S0M datasheet and confirm. Add bulk plus 0.1uF decoupling at each supply ball group and ensure power-fail protection holds program-in-progress operations within the datasheet's tVCC_rise/fall constraints.
For FBGA NAND, fan out signal balls with length-matched, daisy-chained routing to the controller, keeping the DQ/RE/WP command group stub-free and within the interface's flight-time budget. Use a solid ground reference plane directly under the NAND-to-controller nets, and place series termination per the reference design in the controller vendor's layout guide. High-layer-count V-NAND draws higher peak current during program operations than planar NAND, so verify plane copper and via stitching for the return path.
Información de cumplimiento
Compliance status for this MPN was not stated in the retrieved web data. Samsung consumer NAND is typically RoHS-compliant, but per data authenticity policy the status must be confirmed from Samsung's official environmental documentation rather than assumed.
