K9F6408U0B vs K9PDG08U5M Comparación

Comparación detallada lado a lado de K9F6408U0B por Samsung Electronics y K9PDG08U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Fin de vida

Comparación de especificaciones

Parámetro K9F6408U0B K9PDG08U5M
Marca Samsung Electronics Samsung Electronics
Categoría Memory ICs EEPROM
Estado del ciclo de vida Obsolete Fin de vida
Estado del stock In Stock In Stock
Precio unitario (USD) $3,20 $4,20
Memory Organization 8M x 8 bit (64Mbit) —
Tipo de memoria NAND Flash NAND Flash (SLC)
Operating Voltage (VCC) 2.7 V to 3.6 V —
Access Time / Cycle Time 50 ns —
Encapsulado 44-TSOP2 TSOP1-48
Page Size 528 bytes (512 data + 16 spare) [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block organization from datasheet] [DATA_NEEDED: block size]
Program/Erase Endurance 100K program/erase cycles —
Interfaz 8-bit multiplexed command/address/data I/O —
Write Protect Yes (WP pin) —
Ready/Busy Output Yes (R/B open-drain) Yes (R/B, open-drain)
Operating Temperature (TCB0 grade) 0C to 70C —
Operating Temperature (TIB0 grade) -40C to 85C —
Tipo de montaje Surface Mount Surface Mount
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Production Status (per datasheet) Mass Production (legacy; now obsolete) —
Density — 4 Gbit
Organización de memoria — x8 (multiplexed I/O)
Tensión de alimentación — [DATA_NEEDED: supply voltage range]
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Write Protect Pin — Yes (/WP)
Temperatura de funcionamiento — [DATA_NEEDED: operating temperature range]
Endurance — [DATA_NEEDED: program/erase cycles]

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