K9F6408U0B vs K9PDG08U5M Comparação
Comparação detalhada lado a lado de K9F6408U0B por Samsung Electronics e K9PDG08U5M por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fim de vidaComparação de especificações
| Parâmetro | K9F6408U0B | K9PDG08U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | EEPROM |
| Status do ciclo de vida | Obsolete | Fim de vida |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $3,20 | $4,20 |
| Memory Organization | 8M x 8 bit (64Mbit) | — |
| Tipo de memória | NAND Flash | NAND Flash (SLC) |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Access Time / Cycle Time | 50 ns | — |
| Encapsulamento | 44-TSOP2 | TSOP1-48 |
| Page Size | 528 bytes (512 data + 16 spare) | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block organization from datasheet] | [DATA_NEEDED: block size] |
| Program/Erase Endurance | 100K program/erase cycles | — |
| Interface | 8-bit multiplexed command/address/data I/O | — |
| Write Protect | Yes (WP pin) | — |
| Ready/Busy Output | Yes (R/B open-drain) | Yes (R/B, open-drain) |
| Operating Temperature (TCB0 grade) | 0C to 70C | — |
| Operating Temperature (TIB0 grade) | -40C to 85C | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Production Status (per datasheet) | Mass Production (legacy; now obsolete) | — |
| Density | — | 4 Gbit |
| Organização da memória | — | x8 (multiplexed I/O) |
| Tensão de alimentação | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Write Protect Pin | — | Yes (/WP) |
| Temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |