K9HQGY8S5M vs K9ADGD8S0A Comparación
Comparación detallada lado a lado de K9HQGY8S5M por Samsung Electronics y K9ADGD8S0A por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActivoComparación de especificaciones
| Parámetro | K9HQGY8S5M | K9ADGD8S0A |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Activo | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | Non-volatile NAND flash |
| Interfaz | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | [DATA_NEEDED: interface type] |
| Density | [DATA_NEEDED: total bit density] | — |
| Tensión de alimentación | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | [DATA_NEEDED: endurance] |
| Tipo de montaje | Surface Mount (BGA) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |
| Encapsulado | — | [DATA_NEEDED: package] |