K9HQGY8S5M vs K9ADGD8S0A Comparison
Detailed side-by-side comparison of K9HQGY8S5M by Samsung Electronics and K9ADGD8S0A by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9HQGY8S5M | K9ADGD8S0A |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | Non-volatile NAND flash |
| Interface | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | [DATA_NEEDED: interface type] |
| Density | [DATA_NEEDED: total bit density] | — |
| Supply Voltage | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | [DATA_NEEDED: endurance] |
| Mounting Type | Surface Mount (BGA) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |
| Package | — | [DATA_NEEDED: package] |